INTERVALLEY SCATTERING OF ELECTRONS BY CONFINED AND INTERFACE PHONONS IN (GAAS)M(ALAS)N(001) SUPERLATTICES

Grinyayev Sergey Nikolaevich, Nikitina Larisa Nikolaevna, Novikova Olesya Leonidovna, Tyuterev Valeriy Grigoryevich

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On the basis of the pseudopotential method and the phenomenological model of coupling intervalley transitions in the conduction band of superlattices (GaAs)m(AlAs)n(001), caused by interface and trapped in the layers of the optical vibrations of the atoms were investigated. The analysis of quantum size effects in the electron and phonon states was done, dependence of the deformation potentials of the composition and thickness of the layer superlattices was defined. It is shown that the intervalley Г-M scattering is most intensive when the wave functions of electrons and the polarization vector of the phonons are localized in the same layers of superlattice. Interface oscillations occur in superlattices with a sufficiently thick layers and cause a relatively weak intensity of T-Ј transitions of electrons from the central valley to the upper conduction bands.

Keywords: semiconducting superlattices, electron-phonon interaction, intervalley scattering, size quantization

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Issue: 7, 2012

Pages: 62 — 69

Downloads: 909