ON THE RADIATIONLESS DECAY OF A DIRECT EXCITON IN AN INDIRECT GAP SEMICONDUCTOR

Tyuterev Valeriy Grigoryevich, Obukhov Sergey Vladimirovich

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The theory of a radiationless dissociation of exciton in a semiconductor with the indirect forbidden gap is developed. It is shown that in GaAs, GaP and Ge under a pressure the main mechanism of exciton decay is the short-wave phonon-assisted scattering inside the conduction band.

Keywords: The theory of a radiationless dissociation of exciton in a semiconductor with the indirect forbidden gap is developed. It is shown that in GaAs, GaP and Ge under a pressure the main mechanism of exciton decay is the short-wave phonon-assisted scattering i

( 547.32 kB ) ( 510.55 kB )

Issue: 8, 2011

Series of issue: Issue 8

Pages: 49 — 52

Downloads: 1026