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1	ON THE RADIATIONLESS DECAY OF A DIRECT EXCITON IN AN INDIRECT GAP SEMICONDUCTOR // Tomsk State Pedagogical University Bulletin. 2011. Issue 8 (110). P. 49-52 The theory of a radiationless dissociation of exciton in a semiconductor with the indirect forbidden gap is developed. It is shown that in GaAs, GaP and Ge under a pressure the main mechanism of exciton decay is the short-wave phonon-assisted scattering inside the conduction band. Keywords: The theory of a radiationless dissociation of exciton in a semiconductor with the indirect forbidden gap is developed. It is shown that in GaAs, GaP and Ge under a pressure the main mechanism of exciton decay is the short-wave phonon-assisted scattering i	1028

ON THE RADIATIONLESS DECAY OF A DIRECT EXCITON IN AN INDIRECT GAP SEMICONDUCTOR // Tomsk State Pedagogical University Bulletin. 2011. Issue 8 (110). P. 49-52

The theory of a radiationless dissociation of exciton in a semiconductor with the indirect forbidden gap is developed. It is shown that in GaAs, GaP and Ge under a pressure the main mechanism of exciton decay is the short-wave phonon-assisted scattering inside the conduction band.

Keywords: The theory of a radiationless dissociation of exciton in a semiconductor with the indirect forbidden gap is developed. It is shown that in GaAs, GaP and Ge under a pressure the main mechanism of exciton decay is the short-wave phonon-assisted scattering i

1028

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